Thin high-quality calcium fluorite films are grown on (1 1 1) silicon in the low- and middle- temperature molecular-beam epitaxy processes followed by annealing. Metal-insulator-semiconductor structures with such films exhibit much smaller leakage currents than the casual structures with silicon dioxide. They demonstrate also satisfactory wear-out characteristics. Low leakage is achieved not due to high permittivity, but due to restricted tunnel transparency of the fluorite owing to a large effective mass of carriers. Therefore, CaF2 is a promising candidate for gate material in advanced field-effect transistors.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering