Low-leakage MIS structures with 1.5-6 nm CaF2 insulating layer on Si(1 1 1)

N. S. Sokolov, I. V. Grekhov, S. Ikeda, A. K. Kaveev, A. V. Krupin, K. Saiki, K. Tsutsui, S. E. Tyaginov, M. I. Vexler

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Thin high-quality calcium fluorite films are grown on (1 1 1) silicon in the low- and middle- temperature molecular-beam epitaxy processes followed by annealing. Metal-insulator-semiconductor structures with such films exhibit much smaller leakage currents than the casual structures with silicon dioxide. They demonstrate also satisfactory wear-out characteristics. Low leakage is achieved not due to high permittivity, but due to restricted tunnel transparency of the fluorite owing to a large effective mass of carriers. Therefore, CaF2 is a promising candidate for gate material in advanced field-effect transistors.

本文言語English
ページ(範囲)2247-2250
ページ数4
ジャーナルMicroelectronic Engineering
84
9-10
DOI
出版ステータスPublished - 2007 9 1
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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