Low frequency noise characterization in metal oxide semiconductor field effect transistor based charge transfer device at room and low temperatures

Low-frequency noise in metal oxide semiconductor field effect transistor (MOSFET) based charge transfer devices have been characterized both at room temperature and a low temperature. At room temperature the noise observed in charge transfer operation was found to be comparable to or slightly smaller than the noise in the DC operation of these devices. Furthermore, at 20 K the charge transfer operation showed 25 times larger noise power; also, the noise power in charge transfer operation demonstrated a direct proportionality to gate pulse frequency. These observations have been explained on the basis of change of emission and capture times at interface traps. The results presented here also indicate the significance of reduction in number of traps for accurate charge transfer operation at cryogenic temperatures.