Low field transport properties of two-dimensional electron gas in selectively doped N-AlGaAs/GaInAs/GaAs pseudomorphic structures

Ji Kui Luo, Hideo Ohno, Kinichiro Matsuzaki, Hideki Hasegawa

研究成果: Article査読

20 被引用数 (Scopus)

抄録

In order to clarify the low field transport properties of two-dimensional electron gas (2DEG) in selectively doped (SD) AlGaAs/GaInAs/GaAs pseudomorphic structures, electron effective mass as well as electron scattering mechanisms were investigated using molecular beam epitaxially grown SD-Al0.3Ga0.7As/Ga0.87In0.13As/GaAs structures. Temperature dependence of Shubnikov-de Haas oscillation showed that the effective mass of 2DEG was greater than that of a bulk alloy. Enhancement of the effective mass quantitatively agrees with that expected from the effect of strain and nonparabolicity. The 2DEG mobilities were measured by Hall measurements as a function of carrier concentration, ns, as well as a function of temperature. At a low temperature range (< 40 K), mobility increased with increasing ns and saturated at a high ns region where virtually no temperature dependence was observed. Comparison of the mobility with that of AlGaAs/GaAs heterostructures and the results of the scattering theory revealed that the mobility at low temperatures can be quantitatively explained by the cluster scattering due to compositional nonuniformity in addition to the remote ionized impurity scattering.

本文言語English
ページ(範囲)1831-1840
ページ数10
ジャーナルJapanese journal of applied physics
27
10 R
DOI
出版ステータスPublished - 1988 10
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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