Low-energy plasma CVD for epitaxy and in-situ doping of group-IV semiconductors in nanoelectronics

Masao Sakuraba, Hisanao Akima, Shigeo Sato

研究成果: Chapter

抄録

In a trend for highly-scaled semiconductor devices and quantumtunneling devices in Si large-scale integrated circuits (LSI), lowertemperature processing for epitaxy and in-situ doping is necessary and has been pursued because suppression of diffusion length is indispensable. We have been developing a low-energy electroncyclotron- resonance (ECR) plasma chemical vapor deposition (CVD) processing and we have enabled epitaxy of Si, Ge, Si-Ge alloy and Si-C alloy on Si (100) without substrate heating. Moreover, we have enabled in-situ doping of the Si epitaxial film without substrate heating and confirmed rectifying characteristics in p-n junction diodes by using the Si-Ge alloy and B-doped Si films. Moreover, p-type B atomic-layer (AL) doping in Si epitaxy without substrate heating was experimentally demonstrated. This AL doping technique is expected to be applicable not only to low-resistive semiconductor film formation but also to two-dimensional impurity-band formation which is far from thermal equilibrium. By using low-energy ECR nitrogen plasma, low-stress Si nitride film formation was also demonstrated by SiH4 reaction and modification of film properties by subsequent plasma nitridation. Therein, monitoring temperature and waiting for heating-up and cooling-down are not necessary. This means that semiconductor device fabrication becomes "smart" in a viewpoint of consuming time, materials, energy and human. Additionally, new concept of crystal structure transformation in Si from the diamond structure into non-diamond structure was suggested to explore novel property creation. Thus, the low-energy ECR plasma CVD processing is expected to contribute to various fields of material science, engineering and physics of nanoelectronic devices.

本文言語English
ホスト出版物のタイトルChemical Vapor Deposition (CVD)
ホスト出版物のサブタイトルTypes, Uses and Selected Research
出版社Nova Science Publishers, Inc.
ページ61-114
ページ数54
ISBN(電子版)9781536109085
ISBN(印刷版)9781536108934
出版ステータスPublished - 2017 1 1

ASJC Scopus subject areas

  • 化学 (全般)

フィンガープリント

「Low-energy plasma CVD for epitaxy and in-situ doping of group-IV semiconductors in nanoelectronics」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル