Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”

Chunyu Zhao, Chak Wah Tang, Billy Lai, Guanghui Cheng, Jiannong Wang, Kei May Lau

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Gallium nitride (GaN)-based light-emitting diodes (LEDs) are important for lighting and display applications. In this paper, we demonstrate green-emission (512 nm) InGaN quantum dot (QD) LEDs grown on a c-plane sapphire substrate by metal-organic chemical vapor deposition. A radiative lifetime of 707 ps for the uniform InGaN self-assembled QDs is obtained by time-resolved photoluminescence measurement at 18 K. The screening of the built-in fields in the QDs effectively improves the performance of QD LEDs. These high quantum efficiency and high temperature stability green QD LEDs are able to operate with negligible efficiency droop and with current density up to 106 A∕cm2. Our results show that InGaN QDs may be a viable option as the active medium for stable LEDs.

本文言語English
ページ(範囲)750-754
ページ数5
ジャーナルPhotonics Research
8
5
DOI
出版ステータスPublished - 2020 5
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学

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