Low-dimensional systems in ultra-high magnetic fields: Magnetic-field-induced type I to type Il transitions in short-period semiconductor superlattices

N. Miura, Y. Shimamoto, Y. Imanaka, H. Arimoto, H. Nojiri, H. Kunimatsu, K. Uchida, T. Fukuda, K. Yamanaka, H. Momose, N. Mori, C. Hamaguchi

研究成果: Article査読

5 被引用数 (Scopus)

抄録

We present a review on the recent study of the type I to type II transition in short-period superlattices of GaAs/AIAs by means of cyclotron resonance and interband magneto-optical spectroscopy in pulsed high magnetic fields up to 500 T. In the magneto-photoluminescence spectra of excitons in (GaAs)m(AIAs)n, the magnetic-field-induced type I to type II transition was observed with and without the simultaneous application of high pressure. The behaviour of the transition varies depending on the thickness of the AIAs layers. In cyclotron resonance of (GaAs)n(AIAs)n, the resonance peak at the X minima was observed in the type II regime for n smaller than 14, whereas the resonance at the Γ point was observed for n > 15. It was found that the angular dependence of the peak position does not obey the simple cosine dependence due to the subband mixing in high magnetic fields. From the angular dependence, the effective masses at the X point were determined. In high-field cyclotron resonance measurements at 129 meV up to 400 T for n = 16 (type I) the resonance of the X minima expected at around 260 T was indiscernible, despite the fact that the transition should have occurred at lower fields.

本文言語English
ページ(範囲)1586-1590
ページ数5
ジャーナルSemiconductor Science and Technology
11
11 SUPPL. S
DOI
出版ステータスPublished - 1996 11
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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