Low contact resistivity with low silicide/p+-Silicon schottky barrier for high-performance p-channel metal-oxide-silicon field effect transistors

Hiroaki Tanaka, Tatsunori Isogai, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

研究成果: Article

13 引用 (Scopus)

抜粋

A current drivability improvement of p-channel metal-oxide-silicon field effect transistors (MOSFETs) is necessary for the performance enhancement of complementary metal-oxide-semiconductor (CMOS) circuits. In this paper, we present the key technology for fabricating indispensable CMOS circuits with a small Schottky barrier height and a low contact resistance for p-type silicon using Pd2Si. We fabricated a Pd2Si gate Schottky barrier diode and a Kelvin pattern on silicon. The measured Schottky barrier height is 0.29 eV for p-type silicon. We also realized a very low contact resistivity of 3:7 × 10-9Ωcm2 for the pp region of silicon. The p-channel MOSFET with Pd2Si source/drain contacts realized a good characteristic, that is, a small off current. The technology developed in this work involves silicide formation for source/drain contacts of p-channel MOSFETs, which is expected to realize the performance enhancement of MOSFETs.

元の言語English
記事番号04DA03
ジャーナルJapanese journal of applied physics
49
発行部数4 PART 2
DOI
出版物ステータスPublished - 2010 4 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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