Longitudinal resistance anomaly around the 2/3 filling factor observed in a GaAs/AlGaAs single heterostructure

K. Hashimoto, K. Muraki, T. Saku, Y. Hirayama

研究成果: Article査読

13 被引用数 (Scopus)

抄録

A pronounced Rxx enhancement near ν = 2/3 is observed in a back-gated GaAs/AlGaAs single heterostructure when the magnetic field for ν = 2/3 (B2/3) is set less than 6 T using the back gate, but it almost vanishes for B2/3 > 8 T. This tendency is consistent with a model in which the mixed state consisting of two different spin domains plays an important role for the anomalous Rxx enhancement. By taking advantage of the back-gated operation, we find a quick recovery of the Rxx enhancement in spite of prior electron depletion, and the long relaxation time of the Rxx enhancement. These results support the argument that the Rxx enhancement is not memorized by the electron system but by the alternative system such as the nuclear spin configuration leading to a long relaxation time.

本文言語English
ページ(範囲)191-194
ページ数4
ジャーナルPhysica B: Condensed Matter
298
1-4
DOI
出版ステータスPublished - 2001 4 1
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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