Long-time annealing and activation energy of the interdiffusion at AlO x/Co-Fe/Ir-Mn interfaces

Yoshiaki Saito, Minoru Amano, Katsuya Nishiyama, Yoshiaki Asao, Kenji Tsuchida, Hiroaki Yoda, Shuichi Tahara

研究成果: Article査読

抄録

Dual-spin-valve-type double magnetic tunnel junctions (double MTJs) of sputtered Ir-Mn/CoFe/AlOx/CoFeNi/AlOx/CoFe/Ir-Mn were fabricated using photolithography and ion-beam milling. The double MTJs were subjected to long-time annealing at various temperatures (185-400°C) in order to investigate the thermal stability due to the interdiffusion. Magnetoresistance (MR) ratio and resistance were measured at room temperature before and after annealing. The thermal changes of MR ratio are well-explained by considering three phenomena with effective activation energies of 2.6 eV, 0.26 eV, and 1.9eV. These values are in good agreement with the activation energies of the interdiffusion based on the vacancy mechanism. The three phenomena with the effective activation energies are well-explained by considering the interdiffusion and redistribution of O and Mn at the AlO x/Co-Fe/Ir-Mn interfaces. Based on the effective activation energies, it is evaluated that there would be no significant changes in the MR ratio in MTJs with CoFe(3 nm)/IrMn pinned layers for a period of more than 10 years at 160°C.

本文言語English
ページ(範囲)2484-2488
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
43
5 A
DOI
出版ステータスPublished - 2004 5月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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