Logic gates based on electrically driven nanoelectromechanical switches

研究成果: Letter査読

1 被引用数 (Scopus)

抄録

This letter reports the design, fabrication, and evaluation of logic gates including NAND and NOR gates which are composed of electrically driven nanoelectromechanical (NEM) switches. These logic gates are formed by four NEM switches consisting of four cantilevers, two input ports, two source ports, and an output. Devices are successfully fabricated by a combination of electron beam lithography, deep reactive ion etching (RIE), and selective tungsten (W) chemical vapor deposition. Truth tables of NAND and NOR are examined and demonstrated.

本文言語English
ページ(範囲)335-336
ページ数2
ジャーナルIEEJ Transactions on Electrical and Electronic Engineering
14
2
DOI
出版ステータスPublished - 2019 2 1

ASJC Scopus subject areas

  • 電子工学および電気工学

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