Locally induced stress in stacked ultrathin Si wafers: XPS and μ-Raman study

M. Murugesan, H. Nohira, H. Kobayashi, T. Fukushima, T. Tanaka, M. Koyanagi

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

Induced local stress arising from local deformation of top silicon die in the vertically stacked LSI die has been investigated via x-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy (μRS). The large positive shift in the core level Si-2s and Si-2p XP spectra for the thinned die revealed that thinned dies were under heavy stress/strain even before stacking. The core level binding energy shift, ΔEb for Si-1s core level and the relative chemical shift ΔEr for Si in the vertically integrated die system showed that the stacked Si dies were under different stresses in the μ-bump and the bump-space regions. It was also inferred from the μRS results that the stacked 10 μm-thick-Si dies were under large tensile strain of >1.5 GPa and a relatively small compressive stress of ∼0.5 GPa in the μ-bump and bump-space region, respectively.

本文言語English
ホスト出版物のタイトル2012 IEEE 62nd Electronic Components and Technology Conference, ECTC 2012
ページ625-629
ページ数5
DOI
出版ステータスPublished - 2012 10 4
イベント2012 IEEE 62nd Electronic Components and Technology Conference, ECTC 2012 - San Diego, CA, United States
継続期間: 2012 5 292012 6 1

出版物シリーズ

名前Proceedings - Electronic Components and Technology Conference
ISSN(印刷版)0569-5503

Other

Other2012 IEEE 62nd Electronic Components and Technology Conference, ECTC 2012
CountryUnited States
CitySan Diego, CA
Period12/5/2912/6/1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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