Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm

Shigefusa F. Chichibu; Takashi Azuhata; Takayuki Sota; Takashi Mukai

doi:10.1063/1.1385583

Localized excitons in an In_0.06Ga_0.94N multiple-quantum-well laser diode lased at 400 nm

Shigefusa F. Chichibu, Takashi Azuhata, Takayuki Sota, Takashi Mukai

研究成果: Article › 査読

25 被引用数 (Scopus)

抄録

In case of wells and barriers, an InGaN multiple-quantum-well laser was shown to have InN mole fraction of 6% and 2%. Localization depth and Stokes-like shift (SS) were estimated to be 49 and 35 meV at 300 K. Due to the large band-gap bowing and In clustering, the quantum-well exciton localization was considered to be an intrinsic phenomenon in InGaN. In the density of states, the spontaneous emission was due to the recombination of excitons localized at the exponential tail-type potential minima.

本文言語	English
ページ（範囲）	341-343
ページ数	3
ジャーナル	Applied Physics Letters
巻	79
号	3
DOI	https://doi.org/10.1063/1.1385583
出版ステータス	Published - 2001 7月 16
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.1385583

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引用スタイル

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AU - Mukai, Takashi

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AB - In case of wells and barriers, an InGaN multiple-quantum-well laser was shown to have InN mole fraction of 6% and 2%. Localization depth and Stokes-like shift (SS) were estimated to be 49 and 35 meV at 300 K. Due to the large band-gap bowing and In clustering, the quantum-well exciton localization was considered to be an intrinsic phenomenon in InGaN. In the density of states, the spontaneous emission was due to the recombination of excitons localized at the exponential tail-type potential minima.

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