Local strain relaxation in Czochralski-grown GeSi bulk alloys

I. Yonenaga; M. Sakurai; M. Nonaka; T. Ayuzawa; M. H.F. Sluiter; Y. Kawazoe

doi:10.1016/j.physb.2003.09.228

Local strain relaxation in Czochralski-grown GeSi bulk alloys

I. Yonenaga, M. Sakurai, M. Nonaka, T. Ayuzawa, M. H.F. Sluiter, Y. Kawazoe

研究成果: Conference article › 査読

16 被引用数 (Scopus)

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The local atomic structure in GeSi alloys was studied experimentally and theoretically. By extended X-ray absorption fine structure measurements in Czochralski-grown Ge_1-xSi_x bulk alloys, it is found that the Ge-Ge, Ge-Si (Si-Ge) and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion as a function of alloy composition across the entire composition range 0<x<1, in good agreement with what is expected from the ab inito electronic structure calculations. It is known that both bond lengths and bond angles are distorted with alloy composition in GeSi.

本文言語	English
ページ（範囲）	854-857
ページ数	4
ジャーナル	Physica B: Condensed Matter
巻	340-342
DOI	https://doi.org/10.1016/j.physb.2003.09.228
出版ステータス	Published - 2003 12月 31
イベント	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark 継続期間: 2003 7月 28 → 2003 8月 1

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学

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10.1016/j.physb.2003.09.228

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@article{ef56dba82a094735a6a90c5244c80d27,

title = "Local strain relaxation in Czochralski-grown GeSi bulk alloys",

abstract = "The local atomic structure in GeSi alloys was studied experimentally and theoretically. By extended X-ray absorption fine structure measurements in Czochralski-grown Ge1-xSix bulk alloys, it is found that the Ge-Ge, Ge-Si (Si-Ge) and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion as a function of alloy composition across the entire composition range 0",

keywords = "Atomic structure, Crystal growth, Germanium-silicon, Silicon-germanium, Strain relaxation",

author = "I. Yonenaga and M. Sakurai and M. Nonaka and T. Ayuzawa and Sluiter, {M. H.F.} and Y. Kawazoe",

note = "Funding Information: This work was partially supported by JSPS Grants-in Aid (No. 13450001).; Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.228",

language = "English",

volume = "340-342",

pages = "854--857",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

TY - JOUR

T1 - Local strain relaxation in Czochralski-grown GeSi bulk alloys

AU - Yonenaga, I.

AU - Sakurai, M.

AU - Nonaka, M.

AU - Ayuzawa, T.

AU - Sluiter, M. H.F.

AU - Kawazoe, Y.

N1 - Funding Information: This work was partially supported by JSPS Grants-in Aid (No. 13450001).

PY - 2003/12/31

Y1 - 2003/12/31

N2 - The local atomic structure in GeSi alloys was studied experimentally and theoretically. By extended X-ray absorption fine structure measurements in Czochralski-grown Ge1-xSix bulk alloys, it is found that the Ge-Ge, Ge-Si (Si-Ge) and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion as a function of alloy composition across the entire composition range 0

AB - The local atomic structure in GeSi alloys was studied experimentally and theoretically. By extended X-ray absorption fine structure measurements in Czochralski-grown Ge1-xSix bulk alloys, it is found that the Ge-Ge, Ge-Si (Si-Ge) and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion as a function of alloy composition across the entire composition range 0

KW - Atomic structure

KW - Crystal growth

KW - Germanium-silicon

KW - Silicon-germanium

KW - Strain relaxation

UR - http://www.scopus.com/inward/record.url?scp=5544286378&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5544286378&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2003.09.228

DO - 10.1016/j.physb.2003.09.228

M3 - Conference article

AN - SCOPUS:5544286378

VL - 340-342

SP - 854

EP - 857

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Local strain relaxation in Czochralski-grown GeSi bulk alloys

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