Local strain relaxation in Czochralski-grown GeSi bulk alloys

I. Yonenaga, M. Sakurai, M. Nonaka, T. Ayuzawa, M. H.F. Sluiter, Y. Kawazoe

研究成果: Conference article査読

16 被引用数 (Scopus)

抄録

The local atomic structure in GeSi alloys was studied experimentally and theoretically. By extended X-ray absorption fine structure measurements in Czochralski-grown Ge1-xSix bulk alloys, it is found that the Ge-Ge, Ge-Si (Si-Ge) and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion as a function of alloy composition across the entire composition range 0<x<1, in good agreement with what is expected from the ab inito electronic structure calculations. It is known that both bond lengths and bond angles are distorted with alloy composition in GeSi.

本文言語English
ページ(範囲)854-857
ページ数4
ジャーナルPhysica B: Condensed Matter
340-342
DOI
出版ステータスPublished - 2003 12月 31
イベントProceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark
継続期間: 2003 7月 282003 8月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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