Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence

Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, H. Namita, S. Nagao, K. Fujito, S. F. Chichibu

研究成果: Article査読

13 被引用数 (Scopus)

抄録

Spatio-time-resolved cathodoluminescence measurements were carried out on low threading dislocation density freestanding GaN substrates grown by hydride vapor phase epitaxy. High-resolution cathodoluminescence imaging allows for visualization of nonradiative recombination channels in the vicinity of accidentally formed inversion domain boundaries. Local cathodoluminescence lifetimes (τCL) for the near-band-edge (NBE) emission are shown to be sensitively position dependent. A linear relation between the equivalent internal quantum efficiency (ηinteq) and τCL for the NBE emission was observed at room temperature under a weak excitation condition, and spatially resolved excitation led to the observation of the highest ηinteq of 20 with τCL of 3.3 ns.

本文言語English
論文番号212106
ジャーナルApplied Physics Letters
101
21
DOI
出版ステータスPublished - 2012 11月 19

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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