Local excitation and emission dynamics of an isolated single basal-plane stacking-fault in GaN studied by spatio-time-resolved cathodoluminescence

Kentaro Furusawa, Yoichi Ishikawa, Hirotaka Ikeda, Kenji Fujito, Shigefusa F. Chichibu

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Local excitation and emission dynamics of an isolated "Type-I1" basal-plane stacking-fault (BSF) in very low dislocation density GaN were studied using spatio-time-resolved cathodoluminescence. The low temperature lifetime of the BSF emission was quantified to be 640 ps. The carrier diffusion length was estimated by observing the temporal delay of the BSF peak relative to the free-exciton signal as a function of distance from the BSF. The results indicate that the near-band-edge emission leads to subsequent optical excitation of the BSF that increases the apparent diffusion length. Limiting the observation volume can improve the spatial resolution.

本文言語English
論文番号030303
ジャーナルJapanese journal of applied physics
54
3
DOI
出版ステータスPublished - 2015 3 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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