Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and its application to imaging two-dimensional distribution of SiO2/SiC interface traps

N. Chinone, Y. Cho

研究成果: Article

12 引用 (Scopus)

抜粋

We propose a new technique called local deep level transient spectroscopy (local-DLTS), which utilizes scanning nonlinear dielectric microscopy to analyze oxide/semiconductor interface traps, and validate the method by investigating thermally oxidized silicon carbide wafers. Measurements of C-t curves demonstrate the capability of distinguishing sample-to-sample differences in the trap density. Furthermore, the DC bias dependence of the time constant and the local-DLTS signal intensity are investigated, and the results agree to characteristic of interface traps. In addition, the Dit values for the examined samples are estimated from the local-DLTS signals and compared with results obtained using the conventional high-low method. The comparison reveals that the Dit values obtained by the two methods are of the same order of magnitude. Finally, two-dimensional (2D) distributions of local-DLTS signals are obtained, which show substantial intensity variations resulting in random 2D patterns. The 2D distribution of the local-DLTS signal depends on the time constant, which may be due to the coexistence of multiple types of traps with different capture cross sections.

元の言語English
記事番号105701
ジャーナルJournal of Applied Physics
122
発行部数10
DOI
出版物ステータスPublished - 2017 9 14

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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