Local current distribution and electrical properties of a magnetic tunnel junction using conducting atomic force microscopy

A. Canizo-Cabrera, Simon C. Li, Min Fong Shu, Jia Mou Lee, Valentin Garcia-Vazquez, C. C. Chen, J. C. Wu, M. Takahashi, Te Ho Wu

    研究成果: Article査読

    4 被引用数 (Scopus)

    抄録

    Local topographical and electrical properties were simultaneously measured for a magnetic tunnel junction formed by Ta (50 Å)/Ni-Fe (20 Å)/Cu (50 Å)/Mn75 Ir25 (100 Å)/Co 70Fe30(40 Å)/Al-O (8-15 Å)/Co 70Fe30 (40 Å)/Ni-Fe (100 Å)/Ta (50 Å). Local current-voltage (I-V) characteristic curves were obtained for different contrast levels in the electrical current distribution images on the test sample. With the purpose of obtaining quantitative values for the barrier characteristics, data was analyzed by the Simmons' equation from -1.0 to 1.0 V. The magneto resistance ratio values were estimated to be 35.02%, with a bias voltage of 0.36 V, when applying a magnetic field of ±200 Oe. In addition, a study on the ramping effect on the dielectric tunneling capacitance and analytical resistance-capacitance (RC) model were carried out.

    本文言語English
    ページ(範囲)887-891
    ページ数5
    ジャーナルIEEE Transactions on Magnetics
    41
    2
    DOI
    出版ステータスPublished - 2005 2

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 電子工学および電気工学

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