Local carrier distribution imaging on few-layer MoS2 exfoliated on SiO2 by scanning nonlinear dielectric microscopy

Kohei Yamasue, Yasuo Cho

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We demonstrate that scanning nonlinear dielectric microscopy (SNDM) can be used for the nanoscale characterization of dominant carrier distribution on atomically thin MoS2 mechanically exfoliated on SiO2. For stable imaging without damaging microscopy tips and samples, SNDM was combined with peak-force tapping mode atomic force microscopy. The identification of dominant carriers and their spatial distribution becomes possible even for single and few-layer MoS2 on SiO2 using the proposed method allowing differential capacitance (dC/dV) imaging. We can expect that SNDM can also be applied to the evaluation of other two-dimensional semiconductors and devices.

本文言語English
論文番号243102
ジャーナルApplied Physics Letters
112
24
DOI
出版ステータスPublished - 2018 6 11

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Local carrier distribution imaging on few-layer MoS<sub>2</sub> exfoliated on SiO<sub>2</sub> by scanning nonlinear dielectric microscopy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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