Liquid phase epitaxy of si-doped A1N at 13000°c in Ga-Al melt

Asep Ridwan Setiawan, Masayoshi Adachi, Hiroyuki Fukuyama

研究成果: Conference contribution

抄録

In the present study we have successfully grown Si-doped AlN developed by solution growth technique using Ga-Al melt as a solvent under nitrogen atmosphere at 1300 °C. Si doping was introduced to the Ga-Al melt by adding pure Si metal. To allow homoepitaxial growth during solution growth experiment, sapphire substrate were nitrided with precise control to produce hiqh quality single crystalline AlN films with low dislocation density. With the help of AlN film template from above methods, we have successfully grown Si-doped AlN single crystalline layer with a flat surface and almost free from cracks. The full width at half maximum (FWHM) of x-ray rocking curve values for (0002) and (10-12) diffraction from the Si-doped AlN film were 43,2 and 594 arcsec, respectively.

本文言語English
ホスト出版物のタイトルMaterials, Industrial, and Manufacturing Engineering Research Advances 1.1
ページ3-6
ページ数4
DOI
出版ステータスPublished - 2014 1 7
イベント1st International Materials, Industrial, and Manufacturing Engineering Conference, MIMEC 2013 - Johor Bahru, Malaysia
継続期間: 2013 12 42013 12 6

出版物シリーズ

名前Advanced Materials Research
845
ISSN(印刷版)1022-6680

Other

Other1st International Materials, Industrial, and Manufacturing Engineering Conference, MIMEC 2013
CountryMalaysia
CityJohor Bahru
Period13/12/413/12/6

ASJC Scopus subject areas

  • Engineering(all)

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