Liquid phase epitaxial growth of Si layers on Si thin substrates from Si pure melts under near-equilibrium conditions

Kazuo Nakajima, Kozo Fujiwara, Yoshitaro Nose, Noritaka Usami

研究成果: Article査読

4 被引用数 (Scopus)

抄録

The growth of Si epitaxial layers on Si substrates from Si pure melts was attempted under near-equilibrium conditions by dipping-type liquid phase epitaxial (LPE) growth, in order to eliminate the doping effect from metal solutions on the purity of the Si epitaxial layers. Si epitaxial layers can be grown on Si substrates from a Si pure melt only when the temperature of the Si growth melt is kept 1-2°C above the melting point of Si (1414°C) and the growth melt is cooled just after the substrate is dipped in the growth melt. The Si substrate, Si epitaxial layers, and Si polycrystals can be clearly distinguished in the electron back-scattering diffraction pattern (EBSP) image of their cross sections. The growth rate of Si LPE layers during cooling clearly increases as the amount of overheating of the growth melt decreases from 2 to 1°C and the cooling rate increases from 0.4 to 1.0 mm/min.

本文言語English
ページ(範囲)5092-5095
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
44
7 A
DOI
出版ステータスPublished - 2005 7 8

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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