Light-emitting diode based on ZnO by plasma-enhanced metal-organic chemical vapor deposition employing microwave excited plasma

Hirokazu Asahara, Daiju Takamizu, Atsutoshi Inokuchi, Tetsuya Goto, Masaki Hirayama, Akinobu Teramoto, Tadahiro Ohmi

研究成果: Article査読

4 被引用数 (Scopus)

抄録

In this paper we describe the growth of nitrogen doped zinc oxide (ZnO) films on single crystal ZnO substrates by plasma-enhanced metal-organic chemical vapor deposition (PE-MOCVD) employing microwave excited high-density plasma. We used Dimethylzinc (DMZ) as a Zinc precursor, and six different types of oxygen and nitrogen precursors: O2 + N2, NO, N2O, O2 p NH3, NO2, and O2. This paper considers the effects of nitrogen precursor material and utilizing the plasma on the structural properties and the nitrogen concentration by atomic force microscope and secondary ion mass spectrometry. It was only when using plasma and NO 2 that the nitrogen (N) doped ZnO film with the steps and terraces surface structure of two-dimensional growth could be formed by our growth method. Furthermore, we fabricated a homostructural LED comprising the N-doped ZnO film and n-type ZnO substrate, and we achieved electroluminescence (EL) in forward bias at room-temperature (RT) and the current-voltage rectifying characteristics.

本文言語English
論文番号04DG14
ジャーナルJapanese journal of applied physics
49
4 PART 2
DOI
出版ステータスPublished - 2010 4 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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