We studied a new lift-off process of thin Au film on silicon surfaces in nanometer-scale, combining anodic oxidation patterning with AFM, deposition of Au thin film on the patterned substrate and chemical etching processes of the Si oxide underneath the Au film. For Au films of thickness of 2-5 nm, the Au films on the Si oxide patterns were left unbroken and bent down to stick to Si surface after the removal of the oxide by the chemical etching. For an Au film of 1 nm in thickness, it was possible to lift-off the Au film on oxide patterns of the lines and dots in nanometer-scale using Si oxide as a sacrificial mask. (C) 2000 Elsevier Science B.V.
|出版ステータス||Published - 2000 2|
|イベント||The International Conference on Scanning Probe Microscopy, Cantilever Sensors and Nanostructures (SPM '99) - Seattle, WA, USA|
継続期間: 1999 5 30 → 1999 6 1
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