Lifetime prediction of stress induced voiding failure by novel numerical analysis in Cu interconnects with an ultra low-k dielectric

Newly developed computer aided numerical analysis by using the finite difference analysis (FDA) for vacancy concentration combined with the finite elemental analysis (FEA) for stress distribution was proposed to simulate time sequential change of vacancy concentration by stress induced voiding (SIV) and to predict a lifetime. Comparing of results obtained by computer simulation with those by experimental results, the developed numerical analysis was found to enable to simulate SIV phenomenon. The proposed numerical analysis is also possible to obtain the method of improvement on the SIV life time by optimum stress distribution and vacancy diffusivity.