Lens-integrated asymmetric-dual-grating-gate high-electron-mobility-transistor for plasmonic terahertz detection

Tomotaka Hosotani, Fuzuki Kasuya, Hiroki Taniguchi, Takayuki Watanabe, Tetsuya Suemitsu, Taiichi Otsuji, Tadao Ishibashi, Makoto Shimizu, Akira Satou

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for high responsivity, room-temperature operating, and high-speed THz detectors. However, their low light coupling efficiency is one of the serious concerns because of the large focused spot size of free-space THz waves. To improve this, we examine shrinking the THz wave spot size by integrating a detector with a hyper-hemispherical silicon lens. We report the 6-fold enhancement of the coupling efficiency by the silicon lens integration. Also, we show that the dependence of the detector module responsivity on incident THz wave frequency is given by the product of the internal responsivity of ADGG-HEMTs and the light coupling efficiency owing to the silicon lens.

本文言語English
ホスト出版物のタイトル2017 IEEE MTT-S International Microwave Symposium, IMS 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページ578-581
ページ数4
ISBN(電子版)9781509063604
DOI
出版ステータスPublished - 2017 10 4
イベント2017 IEEE MTT-S International Microwave Symposium, IMS 2017 - Honololu, United States
継続期間: 2017 6 42017 6 9

出版物シリーズ

名前IEEE MTT-S International Microwave Symposium Digest
ISSN(印刷版)0149-645X

Other

Other2017 IEEE MTT-S International Microwave Symposium, IMS 2017
CountryUnited States
CityHonololu
Period17/6/417/6/9

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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