Leakage current property of Pb(Zr0.4,Ti0.6)O 3 thin-film capacitors with highly rectangular hysteresis property

Soichiro Okamura, Mitsumasa Tanimura, Hiromi Shima, Hiroshi Naganuma

研究成果: Conference contribution

抄録

The Pb(Zr0 4,Ti0 6)O3 thin-film capacitors with top and bottom Pt electrodes were prepared by chemical solution deposition using the precursor solutions with Pb contents ranging from 104 to 119%. Leakage current densities of the PZT capacitors monotonically decreased with increasing Pb contents. In the Pb110%-PZT capacitor, a conduction mechanism changed from the Schottky emission to the Poole-Frenkel at an electric field of approximately 80 kV/cm at RT while the leakage current was limited only by the Poole-Frenkel in case of less Pb contents. In the Pb110%-PZT capacitor, the Schottky barrier height and a relative permittivity were estimated to be 1.1 eV and 4.8, respectively, and the activation energy of trap sites in the Poole-Frenkel conduction was estimated to be 0.5 eV.

本文言語English
ホスト出版物のタイトル2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
ページ91-93
ページ数3
DOI
出版ステータスPublished - 2007 12 1
外部発表はい
イベント2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan
継続期間: 2007 5 272007 5 31

出版物シリーズ

名前IEEE International Symposium on Applications of Ferroelectrics

Other

Other2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
CountryJapan
CityNara-city
Period07/5/2707/5/31

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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