Lattice parameter determination of a composition controlled Si 1-xGex layer on a Si (001) substrate using convergent-beam electron diffraction

Takayuki Akaogi, Kenji Tsuda, Masami Terauchi, Michiyoshi Tanaka

研究成果: Article査読

5 被引用数 (Scopus)

抄録

The six lattice parameters (a, b, c, α, β and γ) of Si1-xGex, which was grown epitaxially on a Si (001) substrate with a varying Ge concentration, were determined by convergent-beam electron diffraction (CBED) without any assumption of crystal lattice symmetry. It was revealed that the lattice parameter c of Si1-xGex varies linearly with the Ge concentration and that the lattice symmetry is lowered from cubic to tetragonal, excluding an artifact due to the thinning of the specimen. The effect of strain relaxation that is caused by thinning specimens is discussed. Ge concentrations of examined specimen areas are evaluated using the obtained lattice parameters.

本文言語English
ページ(範囲)593-600
ページ数8
ジャーナルJournal of Electron Microscopy
53
6
DOI
出版ステータスPublished - 2004

ASJC Scopus subject areas

  • 器械工学

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