Lattice distortion at SiO2/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling

Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Masashi Yamamoto, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori

研究成果: Article査読

10 被引用数 (Scopus)

抄録

The growth-temperature dependence of the transition structure at the SiO2/Si interface is studied by high-resolution Rutherford backscattering spectroscopy/channeling. A Si lattice distortion is found at the interface. Such distortion propagates more than 2 nm from the interface. It is shown that the SiO2/Si grown by wet oxidation at 1100°C has a smaller lattice distortion than that grown at 900°C. This can be explained in terms of the relaxation of the strained SiO2 network caused by the viscous flow of SiO2 at high temperatures.

本文言語English
ページ(範囲)2467-2469
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
4 A
DOI
出版ステータスPublished - 2006 4月 7
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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