Laterally coupled self-assembled InAs quantum dots embedded in resonant tunnel diode with multigate electrodes

S. Amaha, T. Hatano, S. Teraoka, A. Shibatomi, S. Tarucha, Y. Nakata, T. Miyazawa, T. Oshima, T. Usuki, N. Yokoyama

研究成果: Article査読

34 被引用数 (Scopus)

抄録

We study the electronic properties of submicron vertical resonant tunneling structures containing several self-assembled InAs quantum dots (SADs) surrounded by four gate electrodes. The four gates are designed not only to squeeze the conductive channel containing a few SADs but also to differently modulate the electrochemical potential of each SAD. We measure the stability diagram and distinguish the features of lateral interdot coupling, such as the type of coupling (quantum mechanical or capacitive), the number of coupled dots, and the relative coupled dot position. This technique will be useful in characterizing the electronic properties of coupled SAD systems.

本文言語English
論文番号202109
ジャーナルApplied Physics Letters
92
20
DOI
出版ステータスPublished - 2008

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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