We study the electronic properties of submicron vertical resonant tunneling structures containing several self-assembled InAs quantum dots (SADs) surrounded by four gate electrodes. The four gates are designed not only to squeeze the conductive channel containing a few SADs but also to differently modulate the electrochemical potential of each SAD. We measure the stability diagram and distinguish the features of lateral interdot coupling, such as the type of coupling (quantum mechanical or capacitive), the number of coupled dots, and the relative coupled dot position. This technique will be useful in characterizing the electronic properties of coupled SAD systems.
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