Lateral transport properties of Nb-doped rutile- and anatase-TiO 2 films epitaxially grown on c-plane GaN

K. Hazu, T. Ohtomo, T. Nakayama, A. Tanaka, S. F. Chichibu

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Valence-band offsets for Nb-doped (100) rutile (R-TiO 2) epilayer on (0001) GaN and (001) anatase (A-TiO 2) epilayer mixed with R-TiO 2 on (0001) GaN were determined using x-ray photoelectron spectroscopy to be 0.2 eV and 0.6 eV, respectively. Accordingly, they form type-I and type-II heterojunctions, respectively. The electron mobility as high as 260 cm 2 V -1s -1 was measured for the A (+R)-TiO 2: Nb epilayer on undoped GaN, which is quantitatively explained in terms of electron accumulation at the interfacial region of GaN. The intrinsic mobility of approximately 30 cm 2 V -1s -1 at 300 K was obtained for the A (+R)-TiO 2: Nb epilayer grown on a p-type GaN.

本文言語English
論文番号072107
ジャーナルApplied Physics Letters
101
7
DOI
出版ステータスPublished - 2012 8月 13

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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