Lateral resolution improvement in scanning nonlinear dielectric microscopy by measuring super-higher-order nonlinear dielectric constants

N. Chinone, K. Yamasue, Y. Hiranaga, K. Honda, Y. Cho

研究成果: Article査読

12 被引用数 (Scopus)

抄録

Scanning nonlinear dielectric microscopy (SNDM) can be used to visualize polarization distributions in ferroelectric materials and dopant profiles in semiconductor devices. Without using a special sharp tip, we achieved an improved lateral resolution in SNDM through the measurement of super-higher-order nonlinearity up to the fourth order. We observed a multidomain single crystal congruent LiTaO3 (CLT) sample, and a cross section of a metal-oxide-semiconductor (MOS) field-effect-transistor (FET). The imaged domain boundaries of the CLT were narrower in the super-higher-order images than in the conventional image. Compared to the conventional method, the super-higher-order method resolved the more detailed structure of the MOSFET.

本文言語English
論文番号213112
ジャーナルApplied Physics Letters
101
21
DOI
出版ステータスPublished - 2012 11 19

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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