Lateral GaAs photodetector fabricated by ga focused-ion-beam implantation

Hidehiko Iguchi, Yoshiro Hirayama, Hiroshi Okamoto

研究成果: Article査読

8 被引用数 (Scopus)

抄録

A photodetector with lateral GaAs n+-π-n+ structure is studied. This structure is fabricated by Ga ion implantation into n+-GaAs epilayer on a semi-insulating GaAs substrate using focused-ion-beam (FIB) technology. This photodetector behaves as a phototransistor in low-bias region and avalanche multiplication appears beyond a breakdown voltage. Multiplication gain of more than 50 and impulse response of less than 200 ps were obtained. These characteristics make this device suitable for application in monolithic optoelectronic circuits.

本文言語English
ページ(範囲)L560-L563
ジャーナルJapanese journal of applied physics
25
7
DOI
出版ステータスPublished - 1986 7月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Lateral GaAs photodetector fabricated by ga focused-ion-beam implantation」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル