Laser etching on the Cl-saturated Si(111)7*7 surface at 266 nm studied by scanning tunnelling microscopy

M. Suguri, T. Hashizume, Y. Hasegawa, T. Sakurai, Y. Murata

    研究成果: Article査読

    17 被引用数 (Scopus)

    抄録

    Using scanning tunnelling microscopy, the authors have observed structural modifications of the chlorinated Si(111)7*7 surface induced by 266 nm laser irradiation. At a very low laser fluence of 0.7 mJ cm-2, at which thermal desorption can be ignored, a periodic striped pattern along the (110) direction of the Si(111) surface is imaged. This pattern consists of flat terraces and narrow grooves of approximately 60 and approximately 10 AA in width, respectively.

    本文言語English
    論文番号005
    ページ(範囲)8435-8440
    ページ数6
    ジャーナルJournal of Physics: Condensed Matter
    4
    44
    DOI
    出版ステータスPublished - 1992 12 1

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics

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