TiN films were prepared on Ti(C,N)-based cermet substrate by laser chemical vapor deposition using titanium isopropoxide dipivaloylmethane [Ti(OiPr) 2(dpm)2] and ammonia (NH3) as precursors. The effects of deposition temperature (Tdep) and laser power (P L) on the crystal phase, microstructure and adhesion were investigated. TiN film was prepared at Tdep > 903K (PL > 100 W). The microstructure of TiN film changed from rose-like grains to pyramid-like grains to aggregate grains with increasing PL and T dep. Highly adhesive film was obtained at moderate Tdep = 1047K (PL = 120 W).
ASJC Scopus subject areas
- 化学 (全般)