Large voltage-induced magnetic anisotropy change in a few atomic layers of iron

T. Maruyama, Y. Shiota, T. Nozaki, K. Ohta, N. Toda, M. Mizuguchi, A. A. Tulapurkar, T. Shinjo, M. Shiraishi, S. Mizukami, Y. Ando, Y. Suzuki

研究成果: Article査読

1038 被引用数 (Scopus)

抄録

In the field of spintronics, researchers have manipulated magnetization using spin-polarized currents. Another option is to use a voltage-induced symmetry change in a ferromagnetic material to cause changes in magnetization or in magnetic anisotropy. However, a significant improvement in efficiency is needed before this approach can be used in memory devices with ultralow power consumption. Here, we show that a relatively small electric field (less than 100 mV nm-1) can cause a large change (∼40%) in the magnetic anisotropy of a bcc Fe(001)/MgO(001) junction. The effect is tentatively attributed to the change in the relative occupation of 3d orbitals of Fe atoms adjacent to the MgO barrier. Simulations confirm that voltage-controlled magnetization switching in magnetic tunnel junctions is possible using the anisotropy change demonstrated here, which could be of use in the development of low-power logic devices and non-volatile memory cells.

本文言語English
ページ(範囲)158-161
ページ数4
ジャーナルNature Nanotechnology
4
3
DOI
出版ステータスPublished - 2009 3月

ASJC Scopus subject areas

  • バイオエンジニアリング
  • 原子分子物理学および光学
  • 生体医工学
  • 材料科学(全般)
  • 凝縮系物理学
  • 電子工学および電気工学

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