Large tunnel magnetoresistance of 1056% at room temperature in mgo based double barrier magnetic tunnel junction

研究成果: Article査読

57 被引用数 (Scopus)

抄録

CoFeB/MgO/CoFeB/MgO/CoFeB double barrier magnetic tunnel junctions (DBMTJs) with thin middle layers were fabricated on SiO2/ Si(001) substrates by r.f. magnetron sputtering. We successfully obtained a large tunnel magnetoresistance of 1056% at room temperature in a DBMTJ with a middle CoFeB layer thickness of 1.2 nm that was fabricated at a relatively low post-deposition annealing temperature of 350 °C. This DBMTJ also realized sharp magnetization switching in the free middle CoFeB layer, which is attributed to strong antiferromagnetic coupling between the exterior CoFeB and PtMn layers. These favorable magnetoresistive properties offer interesting possibilities for developing practical spintronics applications and noble magnetotransport physics.

本文言語English
論文番号083002
ジャーナルApplied Physics Express
2
8
DOI
出版ステータスPublished - 2009 8 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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