The spin polarization factor was investigated using electrical spin injection at low temperatures in n+-Si(100)/MgO/ferromagnet lateral spin-valve devices with Co2Fe0.4Mn0.6Si (CFMS) and CoFe electrodes. CFMS films were annealed at different post-annealing temperatures (Ta). Although atomic diffusion of CFMS into the silicon channel was observed at high annealing temperatures, the CFMS device annealed at a Ta of 350 °C, clearly showing a narrow Hanle signal measured using the three-terminal Hanle effect; a consistent spin relaxation time of 7.1 ± 0.4 ns and spin diffusion length of 1.6 ± 0.2 μm were obtained at 10 K. A local three-terminal spin-valve (L-3TSV) signal from the CFMS lateral spin-valve device was obtained at about 370 μV, three times larger than that of the CoFe device. The tunnel spin polarization factor was evaluated from the L-3TSV signals by an analytical equation that considered the spin drift effect. The estimated tunnel spin polarization factor for CFMS was 45% at a Vbias of about 600 mV, while that for CoFe was 18%. This result indicates that the high spin polarization of CFMS is responsible for the large intensity of the L-3TSV signal and that CFMS is a promising FM material for electrical spin injection into silicon.
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