Large-radius neutral beam enhanced chemical vapor deposition process for non-porous ultra-low-k SiOCH

Yoshiyuki Kikuchi, Yasuaki Sakakibara, Seiji Samukawa

研究成果: Conference contribution

抄録

Pores in ultra-low-k carbon-doped silicon oxide (SiOCH) film have been a serious problem because they produce fragile film strength, with the film incurring damage from integration and diffusion of Cu atoms in thermal annealing. To address this problem, we developed a practical large-radius neutral beam enhanced CVD process to precisely control the film structure so as to eliminate any pores in the film. We used the process with dimethoxy-tetramethyl-disiloxane (DMOTMDS) as a precursor to form a SiOCH film on an 8-inch Si wafer and obtained a non-porous film having an ultra-low k-value of 2.2 with sufficient modulus (>10 GPa). Analyzing the film structure by experimental and theoretical techniques showed that symmetric polymethylsilaxane (PMS) chains were grown and cross-linked to each other in the film. This particular film did not incur any damage from acid or alkali solution or oxygen plasma. Furthermore, the dense film almost completely resisted Cu diffusion into it during thermal annealing.

本文言語English
ホスト出版物のタイトルAdvanced Etch Technology for Nanopatterning III
出版社SPIE
ISBN(印刷版)9780819499776
DOI
出版ステータスPublished - 2014
イベントAdvanced Etch Technology for Nanopatterning III - San Jose, CA, United States
継続期間: 2014 2 242014 2 25

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
9054
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

Other

OtherAdvanced Etch Technology for Nanopatterning III
国/地域United States
CitySan Jose, CA
Period14/2/2414/2/25

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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