Large-radius neutral beam enhanced chemical vapor deposition process for non-porous ultra-low-k SiOCH

Yoshiyuki Kikuchi, Yasuaki Sakakibara, Seiji Samukawa

研究成果: Conference contribution

抜粋

Pores in ultra-low-k carbon-doped silicon oxide (SiOCH) film have been a serious problem because they produce fragile film strength, with the film incurring damage from integration and diffusion of Cu atoms in thermal annealing. To address this problem, we developed a practical large-radius neutral beam enhanced CVD process to precisely control the film structure so as to eliminate any pores in the film. We used the process with dimethoxy-tetramethyl-disiloxane (DMOTMDS) as a precursor to form a SiOCH film on an 8-inch Si wafer and obtained a non-porous film having an ultra-low k-value of 2.2 with sufficient modulus (>10 GPa). Analyzing the film structure by experimental and theoretical techniques showed that symmetric polymethylsilaxane (PMS) chains were grown and cross-linked to each other in the film. This particular film did not incur any damage from acid or alkali solution or oxygen plasma. Furthermore, the dense film almost completely resisted Cu diffusion into it during thermal annealing.

元の言語English
ホスト出版物のタイトルAdvanced Etch Technology for Nanopatterning III
出版者SPIE
ISBN(印刷物)9780819499776
DOI
出版物ステータスPublished - 2014
イベントAdvanced Etch Technology for Nanopatterning III - San Jose, CA, United States
継続期間: 2014 2 242014 2 25

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
9054
ISSN(印刷物)0277-786X
ISSN(電子版)1996-756X

Other

OtherAdvanced Etch Technology for Nanopatterning III
United States
San Jose, CA
期間14/2/2414/2/25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • これを引用

    Kikuchi, Y., Sakakibara, Y., & Samukawa, S. (2014). Large-radius neutral beam enhanced chemical vapor deposition process for non-porous ultra-low-k SiOCH. : Advanced Etch Technology for Nanopatterning III [90540H] (Proceedings of SPIE - The International Society for Optical Engineering; 巻数 9054). SPIE. https://doi.org/10.1117/12.2048898