抄録
A large positive magnetoresistance (MR) at room temperature was observed in a GaAs:MnAs granular thin film, in which MnAs nanoclusters were embedded in a GaAs matrix. Current-voltage characteristics and a MR effect of the GaAs:MnAs thin film were measured by a two-point-probe method. The MR ratio of the GaAs:MnAs granular thin film reached more than 600%, when a bias voltage of 110 V was applied to the film.
| 本文言語 | English |
|---|---|
| 論文番号 | 08D502 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 99 |
| 号 | 8 |
| DOI | |
| 出版ステータス | Published - 2006 |
ASJC Scopus subject areas
- 物理学および天文学（全般）