Large diode sensitivity of CoFeB/MgO/CoFeB magnetic tunnel junctions

Shota Ishibashi, Takeshi Seki, Takayuki Nozaki, Hitoshi Kubota, Satoshi Yakata, Akio Fukushima, Shinji Yuasa, Hiroki Maehara, Koji Tsunekawa, David D. Djayaprawira, Yoshishige Suzuki

研究成果: Article査読

57 被引用数 (Scopus)

抄録

We report on rf current-induced excitation of the ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions under a perpendicular magnetic field. By choosing an appropriate external field and using an Fe-rich CoFeB free layer, the effective precession of the free layer could be excited. In a measurement of homodyne detection, a large dc output voltage of 180 μV was obtained when an rf signal power of -25 dBm was applied. The sensitivity of this junction, as an rf rectifier, reaches about 170mV/mW (280mV/mW after impedance matching correction), which is the same order compared with that of a Schottky diode operated at room temperature.

本文言語English
論文番号073001
ジャーナルApplied Physics Express
3
7
DOI
出版ステータスPublished - 2010 7 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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