Large difference of doping behavior of tetracyanoquinodimethane (TCNQ) and 2,3,5,6-Tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4-TCNQ) on field effect transistor with channel of atomic layer MoS2

Hiroki Waizumi, Muhammad Shamim Al Mamun, Tsuyoshi Takaoka, Md Iftekharul Alam, Yudai Tanaka, Atsushi Ando, Zhipeng Wang, Ryuichi Arafune, Tadahiro Komeda

研究成果: Article査読

抄録

We examined the mechanism of the large difference of the doping effect of two molecules of tetracyanoquinodimethane(TCNQ) and 2,3,5,6-Tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4-TCNQ) on the field effect transistor (FET) property, which is composed of the atomically thin MoS2 channel. The electron-acceptor behaviors of the two molecules are detected by examining the threshold voltage shift (ΔVth) of the drain current vs gate voltage curve plot. It shows only a mild shift of ∼4 V for the TCNQ but it shows a large value of ∼33 V for the F4-TCNQ molecule. The similar rapid change with small amount of F4-TCNQ deposition was detected as the Fermi level shift in the ultra violet photoemission spectroscopy (UPS). The DFT calculation shows the flat lying configuration for both molecules after the structural optimization, and the difference of the charge transfer to the substrate is not large enough to explain the difference of theΔVth. Instead, we want to propose a model in which the bonding of the F atom of the F4-TCNQ molecule at the S-defect contribute to the initial rapid variation of theΔVth.

本文言語English
論文番号151252
ジャーナルApplied Surface Science
571
DOI
出版ステータスPublished - 2022 1 1

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

フィンガープリント

「Large difference of doping behavior of tetracyanoquinodimethane (TCNQ) and 2,3,5,6-Tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4-TCNQ) on field effect transistor with channel of atomic layer MoS<sub>2</sub>」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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