TY - GEN
T1 - Lanthanum oxides for gate insulator application
AU - Kakushima, Kuniyuki
AU - Ahmet, Parhat
AU - Sugii, Nobuyuki
AU - Tsutsui, Kazuo
AU - Hattori, Takeo
AU - Iwai, Hiroshi
PY - 2006
Y1 - 2006
N2 - Feasibility study of lanthanum oxides (La2O3) for gate insulator application is presented. Electrical measurements of MOS capacitors with various annealing conditions are performed, where low temperature annealing in nitrogen seems to be the best, which showed electron effective mobility of 261 cm2/Vs by fabricating La2O 3 gated MOSFET. Post-metallization annealing with Al gate metal showed further high effective mobility of 319 cm2/Vs, where reaction between Al and La2O3 were observed, and EOT value increased from 1.29 to 2.33 nm. Novel rare earth oxide stacks are also presented to suppress the EOT growth even at high temperature annealing processing. Copyright The Electrochemical Society.
AB - Feasibility study of lanthanum oxides (La2O3) for gate insulator application is presented. Electrical measurements of MOS capacitors with various annealing conditions are performed, where low temperature annealing in nitrogen seems to be the best, which showed electron effective mobility of 261 cm2/Vs by fabricating La2O 3 gated MOSFET. Post-metallization annealing with Al gate metal showed further high effective mobility of 319 cm2/Vs, where reaction between Al and La2O3 were observed, and EOT value increased from 1.29 to 2.33 nm. Novel rare earth oxide stacks are also presented to suppress the EOT growth even at high temperature annealing processing. Copyright The Electrochemical Society.
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M3 - Conference contribution
AN - SCOPUS:33745471714
SN - 1566774381
SN - 9781566774383
T3 - ECS Transactions
SP - 115
EP - 127
BT - Dielectrics for Nanosystems II
PB - Electrochemical Society Inc.
T2 - 2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
Y2 - 7 May 2006 through 12 May 2006
ER -