Lanthanum oxides for gate insulator application

Kuniyuki Kakushima, Parhat Ahmet, Nobuyuki Sugii, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai

研究成果: Conference contribution

抄録

Feasibility study of lanthanum oxides (La2O3) for gate insulator application is presented. Electrical measurements of MOS capacitors with various annealing conditions are performed, where low temperature annealing in nitrogen seems to be the best, which showed electron effective mobility of 261 cm2/Vs by fabricating La2O 3 gated MOSFET. Post-metallization annealing with Al gate metal showed further high effective mobility of 319 cm2/Vs, where reaction between Al and La2O3 were observed, and EOT value increased from 1.29 to 2.33 nm. Novel rare earth oxide stacks are also presented to suppress the EOT growth even at high temperature annealing processing. Copyright The Electrochemical Society.

本文言語English
ホスト出版物のタイトルDielectrics for Nanosystems II
ホスト出版物のサブタイトルMaterials Science, Processing, Reliability, and Manufacturing
出版社Electrochemical Society Inc.
ページ115-127
ページ数13
1
ISBN(電子版)1566774381
ISBN(印刷版)1566774381, 9781566774383
出版ステータスPublished - 2006
外部発表はい
イベント2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States
継続期間: 2006 5 72006 5 12

出版物シリーズ

名前ECS Transactions
番号1
2
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
国/地域United States
CityDenver, CO
Period06/5/706/5/12

ASJC Scopus subject areas

  • 工学(全般)

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