Lanthanum oxide for gate dielectric insulator

K. Kakushima, K. Tsutsui, T. Hattori, H. Iwai

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

A feasibility study of La2O3, one of the rare earth oxides, for replacing SiO2 gate oxide for CMOS integrated circuits has been reported. It is found that La2O3 after a proper heat treatment has fairly good electrical properties for gate insulator applications in MOSFETs, namely high barrier height for the conduction band electrons and valence band holes as well as its high dielectric constant The conduction mechanism of La2O3 gate insulator has been modeled, and has been shown to be mainly by space charge limited current (SCLC). Long channel MOSFETs with La2O3 gate insulator has been fabricated, where the best effective mobility is 319 cm2/Vs with 2.3 nm of EOT. Interfacial layer (IL) growth suppression due to heat treatment is also reported.

本文言語English
ホスト出版物のタイトル2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
出版社Institute of Electrical and Electronics Engineers Inc.
ページ161-166
ページ数6
ISBN(印刷版)0780393392, 9780780393394
DOI
出版ステータスPublished - 2005
外部発表はい
イベント2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
継続期間: 2005 12月 192005 12月 21

出版物シリーズ

名前2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
国/地域Hong Kong
CityHowloon
Period05/12/1905/12/21

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

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