Lamp-heated rapid vapor-phase doping technology for 100-GHz Si bipolar transistors

Yukihiro Kiyota, Eiji Ohue, Takahiro Onai, Katsuyoshi Washio, Masamichi Tanabe, Taroh Inada

研究成果: Paper査読

6 被引用数 (Scopus)

抄録

High-speed Si bipolar transistor technology that uses lamp-heated Rapid Vapor-phase Doping (RVD) for shallow base formation is demonstrated. By applying RVD to a self-aligned metal/IDP (SMI) base electrode structure, excellent characteristics, 82-GHz fT and 92-GHz fmax, were obtained simultaneously. Devices with longer emitters attained 100 GHz fT and fmax.

本文言語English
ページ173-176
ページ数4
出版ステータスPublished - 1996 12月 1
外部発表はい
イベントProceedings of the 1996 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA
継続期間: 1996 9月 291996 10月 1

Other

OtherProceedings of the 1996 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
CityMinneapolis, MN, USA
Period96/9/2996/10/1

ASJC Scopus subject areas

  • 電子工学および電気工学

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