Kinetics of oxidation on hydrogen-terminated Si(100) and (111) surfaces stored in air

Taka Aki Miura, Michio Niwano, Daisei Shoji, Nobuo Miyamoto

研究成果: Article査読

110 被引用数 (Scopus)

抄録

We have investigated the oxidation of hydrogen-terminated Si(111) and (100) surfaces stored in air, using synchrotron radiation photoemission spectroscopy and infrared absorption spectroscopy in the multiple internal reflection geometry. We demonstrate that water present in air is predominantly involved in the oxidation of surface Si-H bonds, and that native oxide starts to grow when the surface hydrogen coverage is decreased. In order to explain the latter phenomenon, we propose a kinetic model of oxidation which considers the manner in which native oxide formation preferentially occurs on those portions of the surface where the Si-H bonds are oxidized. We suggest that the oxidation of surface Si-H bonds, the rate of which is strongly dependent on the humidity of air, is a rate-limiting step in the native oxide formation on hydrogen-terminated Si surfaces.

本文言語English
ページ(範囲)4373-4380
ページ数8
ジャーナルJournal of Applied Physics
79
8
DOI
出版ステータスPublished - 1996 4月 15

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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