Kinetic study on oxidation of Si(111) surfaces using H2O

Seiichi Takami, Yasuyuki Egashira, Hiroshi Komiyama

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Using X-ray photoelectron spectroscopy, we investigated the temperature dependence of the reaction rates at which oxidation of a hydrogen-terminated Si (Si-H) surface proceeds using H2O vapor. The rates of oxidation at temperatures lower than 250°C are not sensitive to the oxidation temperature or the number of impinging HsO molecules. This result indicates that the rate of oxidation of Si-H at lower temperatures are controlled by generation of activated Si-Si back bonds on Si substrates. On the other hand, the rates of oxidation at temperatures higher than 450°C are controlled by the rate at which hydrogen desorbs from the Si-H surface.

本文言語English
ページ(範囲)2288-2291
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
4 A
DOI
出版ステータスPublished - 1997 4月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Kinetic study on oxidation of Si(111) surfaces using H2O」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル