Key factors for metal organic chemical vapor deposition of InGaN films with high InN molar fraction

Yu Huai Liu, Fang Wang, Wei Zhang, Shou Yi Yang, Yuan Tao Zhang, Ryuji Katayama, Takashi Matsuoka

研究成果: Conference contribution

抄録

InGaN with high InN molar fraction is a promising material for next generation optoelectronic devices and electronic devices such as solar cells, laser diodes for communications, and high mobility transistors and so on. However, the growth of InGaN with high InN molar fraction is still a tough challenge for metal organic chemical vapor deposition (MOCVD). This paper provides experimental clues for the key factors, including the influences of the growth temperature, the V/III ratio, the group III supply ratio, and the reactor pressure. In addition, the effectiveness of the pressurized MOCVD growth of the InGaN with high InN molar fraction will be testified.

本文言語English
ホスト出版物のタイトルEnergy Research and Power Engineering
ページ204-207
ページ数4
DOI
出版ステータスPublished - 2013
イベント2013 International Conference on Energy Research and Power Engineering, ERPE 2013 - Zhengzhou, Henan, China
継続期間: 2013 5 242013 5 25

出版物シリーズ

名前Applied Mechanics and Materials
341-342
ISSN(印刷版)1660-9336
ISSN(電子版)1662-7482

Other

Other2013 International Conference on Energy Research and Power Engineering, ERPE 2013
国/地域China
CityZhengzhou, Henan
Period13/5/2413/5/25

ASJC Scopus subject areas

  • 工学(全般)

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