Isotopic labeling study of the oxygen diffusion in HfO2/SiO 2/Si

Ming Zhao, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Masashi Uematsu, Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara, Heiji Watanabe, Kenji Shiraishi, Toyohiro Chikyow, Keisaku Yamada

研究成果: Article査読

13 被引用数 (Scopus)

抄録

The characteristic oxygen diffusion in HfO2/SiO2/Si structure during the annealing in oxygen has been investigated by high-resolution Rutherford backscattering spectroscopy in combination with oxygen isotope substitution at 900 °C in 0.1 Torr 18O 2. The observed 18O profile suggests that oxygen molecules are decomposed into atomic oxygen in the HfO2 layer and diffuse through the oxide layer via exchange mechanism. This is also supported by the observed activation energy of ∼0.6 eV for the growth of the interfacial SiO2 layer.

本文言語English
論文番号133510
ジャーナルApplied Physics Letters
90
13
DOI
出版ステータスPublished - 2007
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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