We report the Rutherford backscattering spectroscopy/channeling studies of epitaxial grown Ag films on Si(100) substrates irradiated with fast ions ( 12 C ++ , 19 F ++ , 28 Si ++ ) in the energy range between 0.5 and 4 MeV at 200 and - 150°C. The quality of the Ag films is improved considerably by ion irradiation. Irradiation with 0.5 MeV 28 Si ions to 2×10 16 /cm 2 at 200°C, for example, reduces the channeling minimum yield from 55% to 6% at the Ag surface. The improvement of crystalline quality is brought about by a decrease in mosaic spread in the Ag film. Also, it is found that the higher the crystallinity, the more radiation-induced defects are produced. The mechanism involved in the irradiation-induced improvement is discussed.
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