Irradiation-induced improvement in crystal quality of epitaxial Ag/Si(111) films

Katsumi Takahiro, Kiyoshi Kawatsura, Shinji Nagata, Shunya Yamamoto, Hiroshi Naramoto

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Improvement in the crystal quality of epitaxial Ag films on Si (111) substrates using 0.5 MeV Si+ irradiation was analyzed. Investigations show a decrease in the population of twinning grains and mosaic spread of the films. It was found that the low-temperature irradiation lead to the atomic rearrangement at the grain boundaries. The results show that the irradiation-induced improvement in crystal quality (IIICQ) for the epitaxial films was similar to the ion bombardment enhanced grain growth.

本文言語English
ページ(範囲)4166-4170
ページ数5
ジャーナルJournal of Applied Physics
96
8
DOI
出版ステータスPublished - 2004 10 15

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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