抄録
Improvement in the crystal quality of epitaxial Ag films on Si (111) substrates using 0.5 MeV Si+ irradiation was analyzed. Investigations show a decrease in the population of twinning grains and mosaic spread of the films. It was found that the low-temperature irradiation lead to the atomic rearrangement at the grain boundaries. The results show that the irradiation-induced improvement in crystal quality (IIICQ) for the epitaxial films was similar to the ion bombardment enhanced grain growth.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 4166-4170 |
| ページ数 | 5 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 96 |
| 号 | 8 |
| DOI | |
| 出版ステータス | Published - 2004 10月 15 |
ASJC Scopus subject areas
- 物理学および天文学（全般）