Ionic liquid gated electric-double-layer transistors based on Mg-doped InN epitaxial films

Z. Y. Chen, H. T. Yuan, X. Q. Wang, N. Ma, Y. W. Zhang, H. Shimotani, Z. X. Qin, B. Shen, Y. Iwasa

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Taking advantages of broad tunability of carrier density in electric-double-layer transistors (EDLTs) with ionic-liquid gating, we demonstrate evidence of parallel conduction from both p-type bulk and n-type surface in Mg-doped InN EDLTs by comparing their transport properties, especially Hall effect, with those in non-doped InN. Large anomalous oscillation in Hall coefficients with decreasing gate bias was observed in Mg-doped samples, which can be well simulated by two-carrier model. Our results provide the proof for the p-type bulk conduction in Mg-doped InN by showing its prominent effects on electrical transport.

本文言語English
論文番号253508
ジャーナルApplied Physics Letters
103
25
DOI
出版ステータスPublished - 2013 12 16
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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